Magnetic properties and resistive switching in mixture films and nanolaminates consisting of iron and silicon oxides grown by atomic layer deposition

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Kukli , K , Kemell , M , Castan , H , Duenas , S , Link , J , Stern , R , Heikkilä , M J , Jogiaas , T , Kozlova , J , Rahn , M , Mizohata , K , Ritala , M & Leskelä , M 2020 , ' Magnetic properties and resistive switching in mixture films and nanolaminates consisting of iron and silicon oxides grown by atomic layer deposition ' , Journal of vacuum science & technology : an official journal of the American Vacuum Society , vol. 38 , no. 4 . https://doi.org/10.1116/6.0000212

Title: Magnetic properties and resistive switching in mixture films and nanolaminates consisting of iron and silicon oxides grown by atomic layer deposition
Author: Kukli, Kaupo; Kemell, Marianna; Castan, Helena; Duenas, Salvador; Link, Joosep; Stern, Raivo; Heikkilä, Mikko J.; Jogiaas, Taivo; Kozlova, Jekaterina; Rahn, Mihkel; Mizohata, Kenichiro; Ritala, Mikko; Leskelä, Markku
Contributor: University of Helsinki, Department of Chemistry
University of Helsinki, Department of Chemistry
University of Helsinki, Department of Chemistry
University of Helsinki, Materials Physics
University of Helsinki, Department of Chemistry
University of Helsinki, Department of Chemistry
Date: 2020-07
Language: eng
Number of pages: 11
Belongs to series: Journal of vacuum science & technology : an official journal of the American Vacuum Society
ISSN: 0734-2101
URI: http://hdl.handle.net/10138/319210
Abstract: SiO2-Fe2O3 mixture films and nanolaminates were grown by atomic layer deposition from iron trichloride, hexakis(ethylamino)disilane, and ozone at 300 degrees C. Orthorhombic -Fe2O3 was identified in Fe2O3 reference films and in Fe2O3 layers grown to certain thicknesses between amorphous SiO2 layers. SiO2-Fe2O3 films could be magnetized in external fields, exhibiting saturation and hysteresis in nonlinear magnetization-field curves. Electrical resistive switching, markedly dependent on the ratio of the component oxides, was also observed in films with proper composition. For relatively conductive films, application of small signal measurements allowed one to record memory maps with notable squareness and defined distinction between high and low conductance states.
Subject: X-RAY
EPSILON-FE2O3
PARTICLES
FIELD
NANOCRYSTALS
FE2O3/SIO2
TRANSITION
RESONANCE
BEHAVIOR
PROGRAM
221 Nano-technology
116 Chemical sciences
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