Area-Selective Molecular Layer Deposition of Polyimide on Cu through Cu-Catalyzed Formation of a Crystalline Interchain Polyimide

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http://hdl.handle.net/10138/319581

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Zhang , C , Vehkamäki , M , Pietikäinen , M , Leskelä , M & Ritala , M 2020 , ' Area-Selective Molecular Layer Deposition of Polyimide on Cu through Cu-Catalyzed Formation of a Crystalline Interchain Polyimide ' , Chemistry of Materials , vol. 32 , no. 12 , pp. 5073-5083 . https://doi.org/10.1021/acs.chemmater.0c00898

Title: Area-Selective Molecular Layer Deposition of Polyimide on Cu through Cu-Catalyzed Formation of a Crystalline Interchain Polyimide
Author: Zhang, Chao; Vehkamäki, Marko; Pietikäinen, Mika; Leskelä, Markku; Ritala, Mikko
Contributor: University of Helsinki, Department of Chemistry
University of Helsinki, Department of Chemistry
University of Helsinki, Department of Chemistry
University of Helsinki, Department of Chemistry
Date: 2020-06-23
Language: eng
Number of pages: 11
Belongs to series: Chemistry of Materials
ISSN: 0897-4756
URI: http://hdl.handle.net/10138/319581
Abstract: Novel area-selective molecular layer deposition (AS-MLD) of polyimide (PI) on Cu versus native SiO2 was studied. By use of 1,6-diaminohexane (DAH) and pyromellitic dianhydride (PMDA) as precursors, PI films can be selectively deposited on the Cu surface at 200-210 degrees C with a rate around 7.8 A/cycle while negligible growth takes place on SiO2. The selectivity was successfully demonstrated also on Cu/SiO2 patterns at 200 degrees C; after 180 MLD cycles, around 140 nm thick PI was deposited on Cu regions while
Subject: FIELD-EFFECT TRANSISTORS
X-RAY-SCATTERING
MONOLAYER RESISTS
THIN-FILMS
DIFFUSION
GROWTH
PERFORMANCE
PRECURSORS
CHEMISTRY
POLYMERS
116 Chemical sciences
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