Atomic Layer Deposition of PbS Thin Films at Low Temperatures

Show full item record



Popov , G , Bačić , G , Mattinen , M , Manner , T , Lindström , H , Seppänen , H , Suihkonen , S , Vehkamäki , M , Kemell , M , Jalkanen , P , Mizohata , K , Räisänen , J , Leskelä , M , Koivula , H M , Barry , S T & Ritala , M 2020 , ' Atomic Layer Deposition of PbS Thin Films at Low Temperatures ' , Chemistry of Materials , vol. 32 , no. 19 , pp. 8216–8228 .

Title: Atomic Layer Deposition of PbS Thin Films at Low Temperatures
Author: Popov, Georgi; Bačić, Goran; Mattinen, Miika; Manner, Toni; Lindström, Hannu; Seppänen, Heli; Suihkonen, Sami; Vehkamäki, Marko; Kemell, Marianna; Jalkanen, Pasi; Mizohata, Kenichiro; Räisänen, Jyrki; Leskelä, Markku; Koivula, Hanna Maarit; Barry, Seán T.; Ritala, Mikko
Contributor organization: Department of Chemistry
Department of Food and Nutrition
Materials Physics
Department of Physics
Food Sciences
Mikko Ritala / Principal Investigator
Date: 2020-10-13
Language: eng
Number of pages: 13
Belongs to series: Chemistry of Materials
ISSN: 0897-4756
Abstract: Atomic layer deposition (ALD) is a viable method for depositing functional, passivating, and encapsulating layers on top of halide perovskites. Studies in that area have only focused on metal oxides, despite a great number of materials that can be made with ALD. This work demonstrates that, in addition to oxides, other ALD processes can be compatible with the perovskites. We describe two new ALD processes for lead sulfide. These processes operate at low deposition temperatures (45-155 degrees C) that have been inaccessible to previous ALD PbS processes. Our processes rely on volatile and reactive lead precursors Pb(dbda) (dbda = rac-N-2,N-3-di-tertbutylbutane-2,3-diamide) and Pb(btsa)(2) (btsa = bis(trimethylsilyl)amide) as well as H2S. These precursors produce high quality PbS thin films that are uniform, crystalline, and pure. The films exhibit p- type conductivity and good mobilities of 10-70 cm(2) V-1 s(-1). Low deposition temperatures enable direct ALD of PbS onto a halide perovskite CH3NH3PbI3 (MAPI) without its decomposition. The stability of MAPI in ambient air is greatly improved by capping with ALD PbS. More generally, these new processes offer valuable alternatives for PbS-based devices, and we hope that this study will inspire more studies on ALD of non-oxides on halide perovskites.
Description: doi: 10.1021/acs.chemmater.0c01887
114 Physical sciences
116 Chemical sciences
Peer reviewed: Yes
Rights: cc_by
Usage restriction: openAccess
Self-archived version: publishedVersion

Files in this item

Total number of downloads: Loading...

Files Size Format View
acs.chemmater.0c01887.pdf 7.553Mb PDF View/Open

This item appears in the following Collection(s)

Show full item record