Irradiated Single Crystal Chemical Vapor Deposition Diamond Characterized with Various Ionizing Particles

Näytä kaikki kuvailutiedot



Pysyväisosoite

http://hdl.handle.net/10138/324883

Lähdeviite

Naaranoja , T , Golovleva , M , Gädda , A , Martikainen , L , Ott , J , Berretti , M , Garcia , F , Luukka , P , Tuuva , T & Österberg , K 2019 , ' Irradiated Single Crystal Chemical Vapor Deposition Diamond Characterized with Various Ionizing Particles ' , Physica Status Solidi. A: Applications and Materials Science , vol. 216 , no. 21 , 1900361 . https://doi.org/10.1002/pssa.201900361

Julkaisun nimi: Irradiated Single Crystal Chemical Vapor Deposition Diamond Characterized with Various Ionizing Particles
Tekijä: Naaranoja, Tiina; Golovleva, Maria; Gädda, Akiko; Martikainen, Laura; Ott, Jennifer; Berretti, Mirko; Garcia, Francisco; Luukka, Panja; Tuuva, Tuure; Österberg, Kenneth
Muu tekijä: University of Helsinki, Helsinki Institute of Physics
University of Helsinki, Helsinki Institute of Physics
University of Helsinki, Helsinki Institute of Physics
University of Helsinki, Helsinki Institute of Physics
University of Helsinki, Helsinki Institute of Physics
University of Helsinki, Helsinki Institute of Physics
University of Helsinki, Helsinki Institute of Physics
University of Helsinki, Helsinki Institute of Physics
University of Helsinki, Department of Physics
Päiväys: 2019-11
Kieli: eng
Sivumäärä: 11
Kuuluu julkaisusarjaan: Physica Status Solidi. A: Applications and Materials Science
ISSN: 1862-6300
URI: http://hdl.handle.net/10138/324883
Tiivistelmä: The radiation hardness of diamond at the sensor level is studied by irradiating five sensors and studying them with various particle sources, without making any modifications to the sensors in between. The electronics used in the characterization is not irradiated to ensure that any observed effect is merely due to the sensor. Three sensors have received a fluence of 10 (14) protons cm(-2) and two 5 center dot 10 (15) protons cm(-2). At the lower fluence, the impact on the charge collection efficiency is very small, when the applied bias voltage is above 1 V mu m(-1). For the higher fluence, the charge collection efficiency is lower than expected based on earlier studies of diamond radiation hardness on the substrate level. Furthermore, it is noticed that the irradiation has a stronger impact on the signal amplitude recorded with a fast timing than with a charge sensitive amplifier.
Avainsanat: characterization
radiation detectors
radiation tolerance
sensors
single crystal CVD diamond
114 Physical sciences
Tekijänoikeustiedot:


Tiedostot

Latausmäärä yhteensä: Ladataan...

Tiedosto(t) Koko Formaatti Näytä
Hasselt_Diamond_Characterization_Copy_.pdf 10.35MB PDF Avaa tiedosto

Viite kuuluu kokoelmiin:

Näytä kaikki kuvailutiedot