Irradiated Single Crystal Chemical Vapor Deposition Diamond Characterized with Various Ionizing Particles

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dc.contributor University of Helsinki, Helsinki Institute of Physics en
dc.contributor University of Helsinki, Helsinki Institute of Physics en
dc.contributor University of Helsinki, Helsinki Institute of Physics en
dc.contributor University of Helsinki, Helsinki Institute of Physics en
dc.contributor University of Helsinki, Helsinki Institute of Physics en
dc.contributor University of Helsinki, Helsinki Institute of Physics en
dc.contributor University of Helsinki, Helsinki Institute of Physics en
dc.contributor University of Helsinki, Helsinki Institute of Physics en
dc.contributor University of Helsinki, Department of Physics en
dc.contributor.author Naaranoja, Tiina
dc.contributor.author Golovleva, Maria
dc.contributor.author Gädda, Akiko
dc.contributor.author Martikainen, Laura
dc.contributor.author Ott, Jennifer
dc.contributor.author Berretti, Mirko
dc.contributor.author Garcia, Francisco
dc.contributor.author Luukka, Panja
dc.contributor.author Tuuva, Tuure
dc.contributor.author Österberg, Kenneth
dc.date.accessioned 2021-01-19T13:54:01Z
dc.date.available 2021-01-19T13:54:01Z
dc.date.issued 2019-11
dc.identifier.citation Naaranoja , T , Golovleva , M , Gädda , A , Martikainen , L , Ott , J , Berretti , M , Garcia , F , Luukka , P , Tuuva , T & Österberg , K 2019 , ' Irradiated Single Crystal Chemical Vapor Deposition Diamond Characterized with Various Ionizing Particles ' , Physica Status Solidi. A: Applications and Materials Science , vol. 216 , no. 21 , 1900361 . https://doi.org/10.1002/pssa.201900361 en
dc.identifier.issn 1862-6300
dc.identifier.other PURE: 126937107
dc.identifier.other PURE UUID: 63d27c28-e11a-4b6b-8311-b45909eac617
dc.identifier.other WOS: 000481076100001
dc.identifier.other ORCID: /0000-0003-4807-0414/work/66366176
dc.identifier.other ORCID: /0000-0001-9337-5722/work/66366909
dc.identifier.other ORCID: /0000-0002-4023-7964/work/66367144
dc.identifier.other ORCID: /0000-0001-5797-7929/work/66367499
dc.identifier.other ORCID: /0000-0003-1609-3515/work/66367627
dc.identifier.uri http://hdl.handle.net/10138/324883
dc.description.abstract The radiation hardness of diamond at the sensor level is studied by irradiating five sensors and studying them with various particle sources, without making any modifications to the sensors in between. The electronics used in the characterization is not irradiated to ensure that any observed effect is merely due to the sensor. Three sensors have received a fluence of 10 (14) protons cm(-2) and two 5 center dot 10 (15) protons cm(-2). At the lower fluence, the impact on the charge collection efficiency is very small, when the applied bias voltage is above 1 V mu m(-1). For the higher fluence, the charge collection efficiency is lower than expected based on earlier studies of diamond radiation hardness on the substrate level. Furthermore, it is noticed that the irradiation has a stronger impact on the signal amplitude recorded with a fast timing than with a charge sensitive amplifier. en
dc.format.extent 11
dc.language.iso eng
dc.relation.ispartof Physica Status Solidi. A: Applications and Materials Science
dc.rights en
dc.subject characterization en
dc.subject radiation detectors en
dc.subject radiation tolerance en
dc.subject sensors en
dc.subject single crystal CVD diamond en
dc.subject 114 Physical sciences en
dc.title Irradiated Single Crystal Chemical Vapor Deposition Diamond Characterized with Various Ionizing Particles en
dc.type Article
dc.description.version Peer reviewed
dc.identifier.doi https://doi.org/10.1002/pssa.201900361
dc.type.uri info:eu-repo/semantics/other
dc.type.uri info:eu-repo/semantics/acceptedVersion
dc.contributor.pbl
dc.contributor.pbl

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