Rhenium Metal and Rhenium Nitride Thin Films Grown by Atomic Layer Deposition

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dc.contributor.author Hämäläinen, Jani
dc.contributor.author Mizohata, Kenichiro
dc.contributor.author Meinander, Kristoffer
dc.contributor.author Mattinen, Miika
dc.contributor.author Vehkamäki, Marko
dc.contributor.author Räisänen, Jyrki
dc.contributor.author Ritala, Mikko
dc.contributor.author Leskelä, Markku
dc.date.accessioned 2021-02-01T14:30:03Z
dc.date.available 2021-02-01T14:30:03Z
dc.date.issued 2018-10-26
dc.identifier.citation Hämäläinen , J , Mizohata , K , Meinander , K , Mattinen , M , Vehkamäki , M , Räisänen , J , Ritala , M & Leskelä , M 2018 , ' Rhenium Metal and Rhenium Nitride Thin Films Grown by Atomic Layer Deposition ' , Angewandte Chemie (International Edition) , vol. 57 , no. 44 , pp. 14538-14542 . https://doi.org/10.1002/anie.201806985
dc.identifier.other PURE: 117470211
dc.identifier.other PURE UUID: db722ec1-1949-433c-98c6-d802c33c349b
dc.identifier.other RIS: urn:F8416BFE762B44E69135DF529B4D8120
dc.identifier.other Scopus: 85052838473
dc.identifier.other WOS: 000448049800022
dc.identifier.other ORCID: /0000-0002-6210-2980/work/50017158
dc.identifier.other ORCID: /0000-0003-1703-2247/work/50019487
dc.identifier.other ORCID: /0000-0003-4837-1823/work/50022555
dc.identifier.other ORCID: /0000-0002-2903-1199/work/50019332
dc.identifier.other ORCID: /0000-0001-5830-2800/work/50016840
dc.identifier.uri http://hdl.handle.net/10138/325623
dc.description.abstract Abstract Rhenium is both a refractory metal and a noble metal that has attractive properties for various applications. Still, synthesis and applications of rhenium thin films have been limited. We introduce herein the growth of both rhenium metal and rhenium nitride thin films by the technologically important atomic layer deposition (ALD) method over a wide deposition temperature range using fast, simple, and robust surface reactions between rhenium pentachloride and ammonia. Films are grown and characterized for compositions, surface morphologies and roughnesses, crystallinities, and resistivities. Conductive rhenium subnitride films of tunable composition are obtained at deposition temperatures between 275 and 375 °C, whereas pure rhenium metal films grow at 400 °C and above. Even a just 3 nm thick rhenium film is continuous and has a low resistivity of about 90 µΩ cm showing potential for applications for which also other noble metals and refractory metals have been considered. en
dc.format.extent 5
dc.language.iso eng
dc.relation.ispartof Angewandte Chemie (International Edition)
dc.rights unspecified
dc.rights.uri info:eu-repo/semantics/openAccess
dc.subject atomic layer deposition (ALD)
dc.subject rhenium
dc.subject rhenium nitrides
dc.subject thin films
dc.subject AMMONIA-SYNTHESIS
dc.subject CATALYSTS
dc.subject 114 Physical sciences
dc.title Rhenium Metal and Rhenium Nitride Thin Films Grown by Atomic Layer Deposition en
dc.type Article
dc.contributor.organization Department of Chemistry
dc.contributor.organization Department of Physics
dc.contributor.organization Mikko Ritala / Principal Investigator
dc.contributor.organization Department
dc.description.reviewstatus Peer reviewed
dc.relation.doi https://doi.org/10.1002/anie.201806985
dc.relation.issn 1433-7851
dc.rights.accesslevel openAccess
dc.type.version acceptedVersion

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