Atomic Layer Deposition of Rhenium Disulfide

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Hämäläinen , J , Mattinen , M , Mizohata , K , Meinander , K , Vehkamäki , M , Räisänen , J , Ritala , M & Leskelä , M 2018 , ' Atomic Layer Deposition of Rhenium Disulfide ' , Advanced Materials , vol. 30 , no. 24 , 1703622 , pp. 1703622 . https://doi.org/10.1002/adma.201703622

Title: Atomic Layer Deposition of Rhenium Disulfide
Author: Hämäläinen, Jani; Mattinen, Miika; Mizohata, Kenichiro; Meinander, Kristoffer; Vehkamäki, Marko; Räisänen, Jyrki; Ritala, Mikko; Leskelä, Markku
Contributor: University of Helsinki, Department of Chemistry
University of Helsinki, Department of Chemistry
University of Helsinki, Department of Physics
University of Helsinki, Department of Physics
University of Helsinki, Department of Chemistry
University of Helsinki, Department of Physics
University of Helsinki, Mikko Ritala / Principal Investigator
University of Helsinki, Department
Date: 2018-06-13
Language: eng
Number of pages: 6
Belongs to series: Advanced Materials
ISSN: 0935-9648
URI: http://hdl.handle.net/10138/326483
Abstract: 2D materials research is advancing rapidly as various new “beyond graphene” materials are fabricated, their properties studied, and materials tested in various applications. Rhenium disulfide is one of the 2D transition metal dichalcogenides that has recently shown to possess extraordinary properties such as that it is not limited by the strict monolayer thickness requirements. The unique inherent decoupling of monolayers in ReS2 combined with a direct bandgap and highly anisotropic properties makes ReS2 one of the most interesting 2D materials for a plethora of applications. Here, a highly controllable and precise atomic layer deposition (ALD) technique is applied to deposit ReS2 thin films. Film growth is demonstrated on large area (5 cm × 5 cm) substrates at moderate deposition temperatures between 120 and 500 °C, and the films are extensively characterized using field emission scanning electron microscopy/energy‐dispersive X‐ray spectroscopy, X‐ray diffractometry using grazing incidence, atomic force microscopy, focused ion beam/transmission electron microscopy, X‐ray photoelectron spectroscopy, and time‐of‐flight elastic recoil detection analysis techniques. The developed ReS2 ALD process highlights the potential of the material for applications beyond planar structure architectures. The ALD process also offers a route to an upgrade to an industrial scale.
Subject: ALD
atomic layer deposition
ReS2
rhenium sulfide
transition metal dichalcogenides
LARGE-AREA
RES2 NANOSHEETS
CHEMICAL-VAPOR-DEPOSITION
FIELD-EFFECT TRANSISTORS
TRANSITION-METAL DICHALCOGENIDES
PHOTODETECTORS
GROWTH
2-METHOXYPHENOL
CRYSTALS
CATALYSTS
114 Physical sciences
116 Chemical sciences
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