Atomic Layer Deposition of Rhenium Disulfide

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dc.contributor.author Hämäläinen, Jani
dc.contributor.author Mattinen, Miika
dc.contributor.author Mizohata, Kenichiro
dc.contributor.author Meinander, Kristoffer
dc.contributor.author Vehkamäki, Marko
dc.contributor.author Räisänen, Jyrki
dc.contributor.author Ritala, Mikko
dc.contributor.author Leskelä, Markku
dc.date.accessioned 2021-02-15T15:51:01Z
dc.date.available 2021-12-17T22:02:58Z
dc.date.issued 2018-06-13
dc.identifier.citation Hämäläinen , J , Mattinen , M , Mizohata , K , Meinander , K , Vehkamäki , M , Räisänen , J , Ritala , M & Leskelä , M 2018 , ' Atomic Layer Deposition of Rhenium Disulfide ' , Advanced Materials , vol. 30 , no. 24 , 1703622 , pp. 1703622 . https://doi.org/10.1002/adma.201703622
dc.identifier.other PURE: 107502642
dc.identifier.other PURE UUID: 198640f0-6390-411b-9ca7-7b8db864a439
dc.identifier.other RIS: urn:C5C01335B1BD5738E0725FE7D6B15B59
dc.identifier.other WOS: 000436455800003
dc.identifier.other Scopus: 85048290384
dc.identifier.other ORCID: /0000-0002-6210-2980/work/46037164
dc.identifier.other ORCID: /0000-0003-1703-2247/work/46037517
dc.identifier.other ORCID: /0000-0003-4837-1823/work/49416850
dc.identifier.other ORCID: /0000-0002-2903-1199/work/46037512
dc.identifier.other ORCID: /0000-0001-5830-2800/work/46037156
dc.identifier.uri http://hdl.handle.net/10138/326483
dc.description.abstract 2D materials research is advancing rapidly as various new “beyond graphene” materials are fabricated, their properties studied, and materials tested in various applications. Rhenium disulfide is one of the 2D transition metal dichalcogenides that has recently shown to possess extraordinary properties such as that it is not limited by the strict monolayer thickness requirements. The unique inherent decoupling of monolayers in ReS2 combined with a direct bandgap and highly anisotropic properties makes ReS2 one of the most interesting 2D materials for a plethora of applications. Here, a highly controllable and precise atomic layer deposition (ALD) technique is applied to deposit ReS2 thin films. Film growth is demonstrated on large area (5 cm × 5 cm) substrates at moderate deposition temperatures between 120 and 500 °C, and the films are extensively characterized using field emission scanning electron microscopy/energy‐dispersive X‐ray spectroscopy, X‐ray diffractometry using grazing incidence, atomic force microscopy, focused ion beam/transmission electron microscopy, X‐ray photoelectron spectroscopy, and time‐of‐flight elastic recoil detection analysis techniques. The developed ReS2 ALD process highlights the potential of the material for applications beyond planar structure architectures. The ALD process also offers a route to an upgrade to an industrial scale. en
dc.format.extent 6
dc.language.iso eng
dc.relation.ispartof Advanced Materials
dc.rights.uri info:eu-repo/semantics/openAccess
dc.subject ALD
dc.subject atomic layer deposition
dc.subject ReS2
dc.subject rhenium sulfide
dc.subject transition metal dichalcogenides
dc.subject LARGE-AREA
dc.subject RES2 NANOSHEETS
dc.subject CHEMICAL-VAPOR-DEPOSITION
dc.subject FIELD-EFFECT TRANSISTORS
dc.subject TRANSITION-METAL DICHALCOGENIDES
dc.subject PHOTODETECTORS
dc.subject GROWTH
dc.subject 2-METHOXYPHENOL
dc.subject CRYSTALS
dc.subject CATALYSTS
dc.subject 114 Physical sciences
dc.subject 116 Chemical sciences
dc.title Atomic Layer Deposition of Rhenium Disulfide en
dc.type Article
dc.contributor.organization Department of Chemistry
dc.contributor.organization Department of Physics
dc.contributor.organization Mikko Ritala / Principal Investigator
dc.contributor.organization Department
dc.description.reviewstatus Peer reviewed
dc.relation.doi https://doi.org/10.1002/adma.201703622
dc.relation.issn 0935-9648
dc.rights.accesslevel openAccess
dc.type.version acceptedVersion

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