Silicon oxide-niobium oxide mixture films and nanolaminates grown by atomic layer deposition from niobium pentaethoxide and hexakis(ethylamino) disilane

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Kukli , K , Kemell , M , Heikkilä , M J , Castan , H , Duenas , S , Mizohata , K , Ritala , M & Leskelä , M 2020 , ' Silicon oxide-niobium oxide mixture films and nanolaminates grown by atomic layer deposition from niobium pentaethoxide and hexakis(ethylamino) disilane ' , Nanotechnology , vol. 31 , no. 19 , 195713 . https://doi.org/10.1088/1361-6528/ab6fd6

Title: Silicon oxide-niobium oxide mixture films and nanolaminates grown by atomic layer deposition from niobium pentaethoxide and hexakis(ethylamino) disilane
Author: Kukli, Kaupo; Kemell, Marianna; Heikkilä, Mikko J.; Castan, Helena; Duenas, Salvador; Mizohata, Kenichiro; Ritala, Mikko; Leskelä, Markku
Contributor organization: Department of Chemistry
Materials Physics
Department of Physics
Mikko Ritala / Principal Investigator
Date: 2020-05-08
Language: eng
Number of pages: 10
Belongs to series: Nanotechnology
ISSN: 0957-4484
DOI: https://doi.org/10.1088/1361-6528/ab6fd6
URI: http://hdl.handle.net/10138/327025
Abstract: Amorphous SiO2-Nb2O5 nanolaminates and mixture films were grown by atomic layer deposition. The films were grown at 300 degrees C from Nb(OC2H5)(5), Si-2(NHC2H5)(6), and O-3 to thicknesses ranging from 13 to 130 nm. The niobium to silicon atomic ratio was varied in the range of 0.11-7.20. After optimizing the composition, resistive switching properties could be observed in the form of characteristic current-voltage behavior. Switching parameters in the conventional regime were well defined only in a SiO2:Nb2O5 mixture at certain, optimized, composition with Nb:Si atomic ratio of 0.13, whereas low-reading voltage measurements allowed recording memory effects in a wider composition range.
Subject: atomic layer deposition
multilayers
resistive switching
niobium oxide
silicon oxide
memory effects
NB2O5 THIN-FILMS
SOL-GEL METHOD
OPTICAL-PROPERTIES
X-RAY
REACTION-MECHANISM
LOW-POWER
STRESS
AL2O3
STACK
116 Chemical sciences
221 Nano-technology
Peer reviewed: Yes
Usage restriction: openAccess
Self-archived version: acceptedVersion


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