Silicon oxide-niobium oxide mixture films and nanolaminates grown by atomic layer deposition from niobium pentaethoxide and hexakis(ethylamino) disilane

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Kukli , K , Kemell , M , Heikkilä , M J , Castan , H , Duenas , S , Mizohata , K , Ritala , M & Leskelä , M 2020 , ' Silicon oxide-niobium oxide mixture films and nanolaminates grown by atomic layer deposition from niobium pentaethoxide and hexakis(ethylamino) disilane ' , Nanotechnology , vol. 31 , no. 19 , 195713 . https://doi.org/10.1088/1361-6528/ab6fd6

Title: Silicon oxide-niobium oxide mixture films and nanolaminates grown by atomic layer deposition from niobium pentaethoxide and hexakis(ethylamino) disilane
Author: Kukli, Kaupo; Kemell, Marianna; Heikkilä, Mikko J.; Castan, Helena; Duenas, Salvador; Mizohata, Kenichiro; Ritala, Mikko; Leskelä, Markku
Contributor: University of Helsinki, Department of Chemistry
University of Helsinki, Department of Chemistry
University of Helsinki, Department of Chemistry
University of Helsinki, Materials Physics
University of Helsinki, Department of Chemistry
University of Helsinki, Department of Chemistry
Date: 2020-05-08
Language: eng
Number of pages: 10
Belongs to series: Nanotechnology
ISSN: 0957-4484
URI: http://hdl.handle.net/10138/327025
Abstract: Amorphous SiO2-Nb2O5 nanolaminates and mixture films were grown by atomic layer deposition. The films were grown at 300 degrees C from Nb(OC2H5)(5), Si-2(NHC2H5)(6), and O-3 to thicknesses ranging from 13 to 130 nm. The niobium to silicon atomic ratio was varied in the range of 0.11-7.20. After optimizing the composition, resistive switching properties could be observed in the form of characteristic current-voltage behavior. Switching parameters in the conventional regime were well defined only in a SiO2:Nb2O5 mixture at certain, optimized, composition with Nb:Si atomic ratio of 0.13, whereas low-reading voltage measurements allowed recording memory effects in a wider composition range.
Subject: atomic layer deposition
multilayers
resistive switching
niobium oxide
silicon oxide
memory effects
NB2O5 THIN-FILMS
SOL-GEL METHOD
OPTICAL-PROPERTIES
X-RAY
REACTION-MECHANISM
LOW-POWER
STRESS
AL2O3
STACK
116 Chemical sciences
221 Nano-technology
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