Sputtering of beryllium oxide by deuterium at various temperatures simulated with molecular dynamics

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http://hdl.handle.net/10138/327293

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Hodille , E , Byggmästar , J , Safi , E & Nordlund , K 2020 , ' Sputtering of beryllium oxide by deuterium at various temperatures simulated with molecular dynamics ' , Physica Scripta , vol. T171 , no. 1 , 014024 . https://doi.org/10.1088/1402-4896/ab43fa

Title: Sputtering of beryllium oxide by deuterium at various temperatures simulated with molecular dynamics
Author: Hodille, Etienne; Byggmästar, Jesper; Safi, Elnaz; Nordlund, Kai
Contributor: University of Helsinki, Materials Physics
University of Helsinki, Materials Physics
University of Helsinki, Helsinki Institute of Sustainability Science (HELSUS)
Date: 2020-01-01
Language: eng
Number of pages: 6
Belongs to series: Physica Scripta
ISSN: 0031-8949
URI: http://hdl.handle.net/10138/327293
Abstract: The sputtering yield of beryllium oxide (BeO) by incident deuterium (D) ions, for energies from 10 eV to 200 eV, has been calculated for temperatures between 300 K and 800 K using classical molecular dynamics. First, cumulative irradiations are carried out to build up a concentration of D in the material, equal to the experimentally measured concentration, that varies from an atomic fraction of 0.12 (300 K-500 K) to 0.02 ( 800 K). After building up the concentration of D, noncumulative irradiations are carried out to estimate the sputtering yields of BeO. For all incident energies, the sputtering yield peaks at 500 K, being closely related to the decrease of the concentration of D above this temperature. At 10 eV, the concentration of D on the surface drives the temperature dependence, while above 30 eV, it is the amount of surface damage created during the cumulative irradiation.
Subject: BEO
DIFFUSION
EROSION
IDENTIFICATION
JET
RETENTION
beryllium oxide
deuterium
molecular dynamics
plasma-wall interactions
114 Physical sciences
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