Cadmium Telluride X-ray pad detectors with different passivation dielectrics

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http://hdl.handle.net/10138/328224

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Gädda , A , Ott , J , Karadzhinova-Ferrer , A , Golovleva , M , Kalliokoski , M , Winkler , A , Luukka , P & Härkönen , J 2019 , ' Cadmium Telluride X-ray pad detectors with different passivation dielectrics ' , Nuclear Instruments & Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment , vol. 924 , pp. 33-37 . https://doi.org/10.1016/j.nima.2018.08.063

Titel: Cadmium Telluride X-ray pad detectors with different passivation dielectrics
Författare: Gädda, Akiko; Ott, Jennifer; Karadzhinova-Ferrer, Aneliya; Golovleva, Maria; Kalliokoski, Matti; Winkler, Alexander; Luukka, Panja; Härkönen, Jaakko
Upphovmannens organisation: Helsinki Institute of Physics
Doctoral Programme in Particle Physics and Universe Sciences
Datum: 2019-04-21
Språk: eng
Sidantal: 5
Tillhör serie: Nuclear Instruments & Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment
ISSN: 0168-9002
DOI: https://doi.org/10.1016/j.nima.2018.08.063
Permanenta länken (URI): http://hdl.handle.net/10138/328224
Abstrakt: The suitability of two low-temperature dielectric passivation layer processes for the fabrication of Cadmium Telluride (CdTe) X-ray detectors has been investigated. The CdTe crystals with a size of (10 10 1) mm were coated with sputtered aluminum nitride (AlN) or with aluminum oxide (AlO) grown by the atomic layer deposition (ALD) method. The metallization contacts of the detectors were made by titanium tungsten (TiW) and gold (Au) metal sputtering depositions. The pad detector structures were patterned with proximity-contactless photolithography techniques followed by lift-off patterning of the electrodes. The detector properties were characterized at room temperature by Transient Current Technique (TCT) measurements. The obtained results were compared and verified by numerical TCAD simulations of the detector response. Our results indicate that higher signal charge was collected from samples with AlO. Furthermore, no significant laser light induced signal decay by CdTe material polarization was observed within order of 30 min of continuous illumination.
Subject: 114 Physical sciences
Cadmium Telluride (CdTe)
Atomic layer deposition (ALD)
X-ray detector
LAYER DEPOSITION ALD
CDTE
AL2O3
PROGRESS
FIELD
SI
Referentgranskad: Ja
Licens: cc_by_nc_nd
Användningsbegränsning: openAccess
Parallelpublicerad version: acceptedVersion


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