Atomic Layer Deposition of Insulating AlF3/Polyimide Nanolaminate Films

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Li , X , Vehkamaki , M , Heikkila , M , Mattinen , M , Putkonen , M , Leskela , M & Ritala , M 2021 , ' Atomic Layer Deposition of Insulating AlF3/Polyimide Nanolaminate Films ' , Coatings , vol. 11 , no. 3 , 355 .

Title: Atomic Layer Deposition of Insulating AlF3/Polyimide Nanolaminate Films
Author: Li, Xinzhi; Vehkamaki, Marko; Heikkila, Mikko; Mattinen, Miika; Putkonen, Matti; Leskela, Markku; Ritala, Mikko
Contributor organization: Department of Chemistry
Mikko Ritala / Principal Investigator
Date: 2021-03
Language: eng
Number of pages: 13
Belongs to series: Coatings
ISSN: 2079-6412
Abstract: This article describes the deposition of AlF3/polyimide nanolaminate film by inorganic-organic atomic layer deposition (ALD) at 170 degrees C. AlCl3 and TiF4 were used as precursors for AlF3. Polyimide layers were deposited from PMDA (pyromellitic dianhydride, 1,2,3,5-benzenetetracarboxylic anhydride) and DAH (1,6-diaminohexane). With field-emission scanning electron microscopy (FESEM) and X-ray reflection (XRR) analysis, it was found that the topmost layer (nominally 10 nm in thickness) of the nanolaminate film (100 nm total thickness) changed when exposed to the atmosphere. After all, the effect on roughness was minimal. The length of a delay time between the AlF3 and polyimide depositions was found to affect the sharpness of the nanolaminate structure. Electrical properties of AlF3/polyimide nanolaminate films were measured, indicating an increase in dielectric constant compared to single AlF3 and a decrease in leakage current compared to polyimide films, respectively.
Subject: ALD
nanolaminate films
low-k materials
221 Nano-technology
Peer reviewed: Yes
Rights: cc_by
Usage restriction: openAccess
Self-archived version: publishedVersion

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