Atomic layer deposition of TbF3 thin films

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Atosuo , E , Ojala , J , Heikkila , M J , Mattinen , M , Mizohata , K , Raisanen , J , Leskela , M & Ritala , M 2021 , ' Atomic layer deposition of TbF3 thin films ' , Journal of vacuum science & technology : an official journal of the American Vacuum Society , vol. 39 , no. 2 , 022404 . https://doi.org/10.1116/6.0000790

Title: Atomic layer deposition of TbF3 thin films
Author: Atosuo, Elisa; Ojala, Juha; Heikkila, Mikko J.; Mattinen, Miika; Mizohata, Kenichiro; Raisanen, Jyrki; Leskela, Markku; Ritala, Mikko
Contributor: University of Helsinki, Department of Chemistry
University of Helsinki, Department of Chemistry
University of Helsinki, Department of Chemistry
University of Helsinki, Department of Chemistry
University of Helsinki, Materials Physics
University of Helsinki, Department of Physics
University of Helsinki, Department of Chemistry
University of Helsinki, Department of Chemistry
Date: 2021-03
Language: eng
Number of pages: 7
Belongs to series: Journal of vacuum science & technology : an official journal of the American Vacuum Society
ISSN: 0734-2101
URI: http://hdl.handle.net/10138/330251
Abstract: Lanthanide fluoride thin films have gained interest as materials for various optical applications, including electroluminescent displays and mid-IR lasers. However, the number of atomic layer deposition (ALD) processes for lanthanide fluorides has remained low. In this work, we present an ALD process for TbF3 using tris(2,2,6,6-tetramethyl-3,5-heptanedionato)terbium and TiF4 as precursors. The films were grown at 175-350 degrees C. The process yields weakly crystalline films at the lowest deposition temperature, whereas strongly crystalline, orthorhombic TbF3 films are obtained at higher temperatures. The films deposited at 275-350 degrees C are exceptionally pure, with low contents of C, O, and H, and the content of titanium is below the detection limit (
Subject: 114 Physical sciences
116 Chemical sciences
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