Atomic layer deposition of TbF3 thin films

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Atosuo , E , Ojala , J , Heikkila , M J , Mattinen , M , Mizohata , K , Raisanen , J , Leskela , M & Ritala , M 2021 , ' Atomic layer deposition of TbF3 thin films ' , Journal of vacuum science & technology : an official journal of the American Vacuum Society , vol. 39 , no. 2 , 022404 . https://doi.org/10.1116/6.0000790

Title: Atomic layer deposition of TbF3 thin films
Author: Atosuo, Elisa; Ojala, Juha; Heikkila, Mikko J.; Mattinen, Miika; Mizohata, Kenichiro; Raisanen, Jyrki; Leskela, Markku; Ritala, Mikko
Contributor organization: Department of Chemistry
Materials Physics
Department of Physics
Mikko Ritala / Principal Investigator
Date: 2021-03
Language: eng
Number of pages: 7
Belongs to series: Journal of vacuum science & technology : an official journal of the American Vacuum Society
ISSN: 0734-2101
DOI: https://doi.org/10.1116/6.0000790
URI: http://hdl.handle.net/10138/330251
Abstract: Lanthanide fluoride thin films have gained interest as materials for various optical applications, including electroluminescent displays and mid-IR lasers. However, the number of atomic layer deposition (ALD) processes for lanthanide fluorides has remained low. In this work, we present an ALD process for TbF3 using tris(2,2,6,6-tetramethyl-3,5-heptanedionato)terbium and TiF4 as precursors. The films were grown at 175-350 degrees C. The process yields weakly crystalline films at the lowest deposition temperature, whereas strongly crystalline, orthorhombic TbF3 films are obtained at higher temperatures. The films deposited at 275-350 degrees C are exceptionally pure, with low contents of C, O, and H, and the content of titanium is below the detection limit (
Subject: 114 Physical sciences
116 Chemical sciences
Peer reviewed: Yes
Usage restriction: openAccess
Self-archived version: acceptedVersion


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