Deformations related to atom mixing in Si/SiO2/Si nanopillars under high-fluence broad-beam irradiation

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http://hdl.handle.net/10138/333983

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Fridlund , C , Lopez-Cazalilla , A , Nordlund , K & Djurabekova , F 2021 , ' Deformations related to atom mixing in Si/SiO2/Si nanopillars under high-fluence broad-beam irradiation ' , Physical Review Materials , vol. 5 , no. 8 , 083606 . https://doi.org/10.1103/PhysRevMaterials.5.083606

Title: Deformations related to atom mixing in Si/SiO2/Si nanopillars under high-fluence broad-beam irradiation
Author: Fridlund, C.; Lopez-Cazalilla, A.; Nordlund, K.; Djurabekova, F.
Contributor: University of Helsinki, Doctoral Programme in Materials Research and Nanosciences
University of Helsinki, Department of Physics
University of Helsinki, Department of Physics
University of Helsinki, Department of Physics
Date: 2021-08-16
Language: eng
Number of pages: 14
Belongs to series: Physical Review Materials
ISSN: 2475-9953
URI: http://hdl.handle.net/10138/333983
Abstract: Structures consisting of a single Si nanodot buried within an insulating nanometric SiO2 layer stacked between two Si layers show promising properties for room temperature operational single-electron transistors. Moreover, such structures are highly compatible with modern complementary metal-oxide semiconductor technologies. Metastable SiOx phase separates into a Si nanodot and insulating, homogeneous SiO2 during annealing, providing a solid path towards the desired structure. However, achieving the necessary amount of excessive Si, dissolved in the SiO2 for correct concentrations of SiOx, remains a technological challenge. In this work, we investigate ion-induced atom mixing in pre-built Si/SiO2/Si nanopillars, which is considered to be a technologically promising way to produce the necessary concentrations of spatially confined SiOx in a controlled manner. During the high-fluence ion irradiation, we notice a significant shortening of the nanopillar and preferential loss of O atoms. Both sputtering and nanoscale ion hammering are found to be the cause of the deformation. The ion-hammering effect on nanoscale is explained by multiple small displacements, strongly enhanced after the nanopillar was rendered completely amorphous. The methods presented here can be used to determine the ion-fluence threshold for sufficient atom mixing in spatially confined regions before the large structural deformations are formed.
Subject: 114 Physical sciences
SINGLE-ELECTRON TRANSISTORS
ION-BEAM
SI NANOCRYSTALS
DISPLACEMENT
PERFORMANCE
FABRICATION
DOT
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