In situ reaction mechanism study on atomic layer deposition of intermetallic Co3Sn2 thin films

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http://hdl.handle.net/10138/334330

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Nieminen , H-E , Kaipio , M & Ritala , M 2020 , ' In situ reaction mechanism study on atomic layer deposition of intermetallic Co 3 Sn 2 thin films ' , Chemistry of Materials , vol. 32 , no. 19 , pp. 8120-8128 . https://doi.org/10.1021/acs.chemmater.0c01003

Title: In situ reaction mechanism study on atomic layer deposition of intermetallic Co3Sn2 thin films
Author: Nieminen, Heta-Elisa; Kaipio, Mikko; Ritala, Mikko
Contributor: University of Helsinki, Department of Chemistry
University of Helsinki, Department of Chemistry
University of Helsinki, Mikko Ritala / Principal Investigator
Date: 2020-09-14
Language: eng
Number of pages: 9
Belongs to series: Chemistry of Materials
ISSN: 0897-4756
URI: http://hdl.handle.net/10138/334330
Abstract: In this work, a growth mechanism of an intermetallic Co3Sn2 thin film is studied in situ with a quartz crystal microbalance (QCM) and quadrupole mass spectrometer (QMS). The film is deposited by atomic layer deposition (ALD) from CoCl2 (TMEDA) and Bu3SnH precursors (TMEDA = N,N,N' ,N' - tetramethylethylenediamine). Balanced reaction equations are resolved by fitting the QMS and QCM data, and a step-by-step growth mechanism is determined for the process. During the CoCl2 (TMEDA) pulse, only 1-chlorobutane is formed as a byproduct. However, during the Bu3SnH pulse, two byproducts, BuCl and Bu3SnCl, were clearly detected, indicating that two competing reaction pathways exist during that pulse. Preliminary studies on another intermetallic ALD process, Ni3Sn2, revealed that the reactions occur similarly as in the Co3Sn2 process.
Subject: 116 Chemical sciences
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