Highly conductive and stable Co9S8 thin films by atomic layer deposition : from process development and film characterization to selective and epitaxial growth

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Mattinen , M , Hatanpaa , T , Mizohata , K , Raisanen , J , Leskela , M & Ritala , M 2021 , ' Highly conductive and stable Co9S8 thin films by atomic layer deposition : from process development and film characterization to selective and epitaxial growth ' , Dalton Transactions , vol. 50 , no. 38 , pp. 13264-13275 . https://doi.org/10.1039/d1dt02315b

Title: Highly conductive and stable Co9S8 thin films by atomic layer deposition : from process development and film characterization to selective and epitaxial growth
Author: Mattinen, Miika; Hatanpaa, Timo; Mizohata, Kenichiro; Raisanen, Jyrki; Leskela, Markku; Ritala, Mikko
Contributor: University of Helsinki, Department of Chemistry
University of Helsinki, Department of Chemistry
University of Helsinki, Materials Physics
University of Helsinki, Department of Physics
University of Helsinki, Department of Chemistry
University of Helsinki, Department of Chemistry
Date: 2021-10-05
Language: eng
Number of pages: 12
Belongs to series: Dalton Transactions
ISSN: 1477-9226
URI: http://hdl.handle.net/10138/335353
Abstract: Co9S8 is an interesting sulfide material with metallic conductivity that has shown promise for various energy applications. Herein, we report a new atomic layer deposition process producing crystalline, pure, and highly conductive Co9S8 thin films using CoCl2(TMEDA) (TMEDA = N,N,N ',N '-tetramethylethylenediamine) and H2S as precursors at 180-300 degrees C. The lowest resistivity of 80 mu omega cm, best uniformity, and highest growth rate are achieved at 275 degrees C. Area-selective deposition is enabled by inherent substrate-dependency of film nucleation. We show that a continuous and conductive Co9S8 film can be prepared on oxide-covered silicon without any growth on Si-H. Besides silicon, Co9S8 films can be grown on a variety of substrates. The first example of an epitaxial Co9S8 film is shown using a GaN substrate. The Co9S8 films are stable up to 750 degrees C in N-2, 400 degrees C in forming gas, and 225 degrees C in O-2 atmosphere. The reported ALD process offers a scalable and cost-effective route to high-quality Co9S8 films, which are of interest for applications ranging from electrocatalysis and rechargeable batteries to metal barrier and liner layers in microelectronics and beyond.
Subject: COBALT SULFIDE
PHASE
EFFICIENT
CO
TEMPERATURE
PRECURSORS
ELECTRODES
SAPPHIRE
SURFACE
116 Chemical sciences
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