Effect of Mn and Mg dopants on vacancy defect formation in ammonothermal GaN

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Heikkinen , T , Pavlov , J , Ceponis , T , Gaubas , E , Zajac , M & Tuomisto , F 2020 , ' Effect of Mn and Mg dopants on vacancy defect formation in ammonothermal GaN ' , Journal of Crystal Growth , vol. 547 , 125803 . https://doi.org/10.1016/j.jcrysgro.2020.125803

Title: Effect of Mn and Mg dopants on vacancy defect formation in ammonothermal GaN
Author: Heikkinen, T.; Pavlov, J.; Ceponis, T.; Gaubas, E.; Zajac, M.; Tuomisto, F.
Contributor organization: Department of Physics
Helsinki Institute of Physics
Date: 2020-10-01
Language: eng
Number of pages: 5
Belongs to series: Journal of Crystal Growth
ISSN: 0022-0248
DOI: https://doi.org/10.1016/j.jcrysgro.2020.125803
URI: http://hdl.handle.net/10138/346137
Abstract: We have applied positron annihilation spectroscopy to study the formation of Ga vacancy related defects in Mg and Mn doped bulk GaN crystals grown by the ammonothermal method. We show that Mn doping has little or no effect on the formation of Ga vacancies, while Mg doping strongly suppresses their formation, in spite of both dopants leading to highly resistive material. We suggest the differences are primarily due to the hydrogen-dopant interactions. Further investigations are called for to draw a detailed picture of the atomic scale phe-nomena in the synthesis of ammonothermal GaN.
Subject: Point defects
Doping
Hydrothermal growth
Nitrides
Semiconducting III-V materials
NA-FLUX METHOD
HIGH-PRESSURE
GROWTH
114 Physical sciences
Peer reviewed: Yes
Rights: cc_by_nc_nd
Usage restriction: openAccess
Self-archived version: acceptedVersion


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