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T1  - Area-Selective Molecular Layer Deposition of Polyimide on Cu through Cu-Catalyzed Formation of a Crystalline Interchain Polyimide 
SN  -  /  
UR  - http://hdl.handle.net/10138/319581 
T3  -  
A1  - Zhang, Chao; Vehkamäki, Marko; Pietikäinen, Mika; Leskelä, Markku; Ritala, Mikko 
A2  -  
PB  -  
Y1  - 2020 
LA  - eng 
AB  - Novel area-selective molecular layer deposition (AS-MLD) of polyimide (PI) on Cu versus native SiO2 was studied. By use of 1,6-diaminohexane (DAH) and pyromellitic dianhydride (PMDA) as precursors, PI films can be selectively deposited on the Cu surface at 200-210 degrees C with a rate around 7.8 A/cycle while negligible growth takes place on SiO2. The selectivity was successfully demonstrated also on Cu/SiO2 patterns at 200 degrees C; after 180 MLD cycles, around 140 nm thick PI was deposited o... 
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KW  - FIELD-EFFECT TRANSISTORS; X-RAY-SCATTERING; MONOLAYER RESISTS; THIN-FILMS; DIFFUSION; GROWTH; PERFORMANCE; PRECURSORS; CHEMISTRY; POLYMERS; 116 Chemical sciences 
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