TY  -  
T1  - Atomic Layer Deposition and Properties of HfO2-Al2O3 Nanolaminates 
SN  -  /  
UR  - http://hdl.handle.net/10138/246369 
T3  -  
A1  - Kukli, Kaupo; Kemell, Marianna; Castan, Helena; Duenas, Salvador; Seemen, Helina; Rähn, Mihkel; Link, Joosep; Stern, Raivo; Ritala, Mikko; Leskelä, Markku 
A2  -  
PB  -  
Y1  - 2018 
LA  - eng 
AB  - Nanocrystalline HfO2:Al2O3 mixture films and nanolaminates were grown by atomic layer deposition at 350 degrees C from metal chloride precursors and water. Formation of metastable HfO2 polymorphs versus monoclinic phase was affected by the relative amount and thickness of constituent oxide layers. The films exhibited saturative magnetization and charge polarization in externally applied fields at room temperature. The films also demonstrated resistive switching behavior with considerable window ... 
VO  -  
IS  -  
SP  -  
OP  -  
KW  - HFO2 THIN-FILMS; ELECTRICAL-PROPERTIES; DIELECTRIC-PROPERTIES; HAFNIUM OXIDE; MEMORY; 116 Chemical sciences; 221 Nano-technology 
N1  -   
PP  -  
ER  -