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T1  - Atomic Layer Deposition of Crystalline MoS2 Thin Films : New Molybdenum Precursor for Low-Temperature Film Growth 
SN  -  /  
UR  - http://hdl.handle.net/10138/301614 
T3  -  
A1  - Mattinen, Miika; Hatanpaa, Timo; Sarnet, Tiina; Mizohata, Kenichiro; Meinander, Kristoffer; King, Peter J.; Khriachtchev, Leonid; Räisänen, Jyrki; Ritala, Mikko; Leskelä, Markku 
A2  -  
PB  -  
Y1  - 2017 
LA  - eng 
AB  - Molybdenum disulfide (MoS2) is a semiconducting 2D material, which has evoked wide interest due to its unique properties. However, the lack of controlled and scalable methods for the production of MoS2 films at low temperatures remains a major hindrance on its way to applications. In this work, atomic layer deposition (ALD) is used to deposit crystalline MoS2 thin films at a relatively low temperature of 300 degrees C. A new molybdenum precursor, Mo(thd)(3) (thd = 2,2,6,6-tetramethylheptane-3,5-... 
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IS  -  
SP  -  
OP  -  
KW  - 2D materials; atomic layer deposition; MoS2; thin films; TRANSITION-METAL DICHALCOGENIDES; CHEMICAL-VAPOR-DEPOSITION; ELECTROCHEMICAL HYDROGEN EVOLUTION; 2-DIMENSIONAL MATERIALS; VALLEY POLARIZATION; WAFER-SCALE; IN-SITU; SULFIDE; MONOLAYER; RAMAN; 116 Chemical sciences; 114 Physical sciences 
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ER  -