TY  -  
T1  - Atomic Layer Deposition of Photoconductive Cu2O Thin Films 
SN  -  /  
UR  - http://hdl.handle.net/10138/304671 
T3  -  
A1  - Iivonen, Tomi; Heikkilä, Mikko J.; Popov, Georgi; Nieminen, Heta-Elisa; Kaipio, Mikko; Kemell, Marianna; Mattinen, Miika; Meinander, Kristoffer; Mizohata, Kenichiro; Räisänen, Jyrki; Ritala, Mikko; Leskelä, Markku 
A2  -  
PB  -  
Y1  - 2019 
LA  - eng 
AB  - Herein, we report an atomic layer deposition (ALD) process for Cu2O thin films using copper(II) acetate [Cu(OAc)(2)] and water vapor as precursors. This precursor combination enables the deposition of phase-pure, polycrystalline, and impurity-free Cu2O thin films at temperatures of 180-220 degrees C. The deposition of Cu(I) oxide films from a Cu(II) precursor without the use of a reducing agent is explained by the thermally induced reduction of Cu(OAc)(2) to the volatile copper(I) acetate, CuOAc... 
VO  -  
IS  -  
SP  -  
OP  -  
KW  - CHEMICAL-VAPOR-DEPOSITION; X-RAY; THERMAL-DECOMPOSITION; CUPROUS-OXIDE; ELECTRONIC-STRUCTURE; OPTICAL-CONSTANTS; COPPER; CONDUCTION; SUBSTRATE; OXIDATION; 116 Chemical sciences; 114 Physical sciences; 221 Nano-technology 
N1  -   
PP  -  
ER  -