TY  -  
T1  - Atomic Layer Deposition of Rhenium Disulfide 
SN  -  /  
UR  - http://hdl.handle.net/10138/326483 
T3  -  
A1  - Hämäläinen, Jani; Mattinen, Miika; Mizohata, Kenichiro; Meinander, Kristoffer; Vehkamäki, Marko; Räisänen, Jyrki; Ritala, Mikko; Leskelä, Markku 
A2  -  
PB  -  
Y1  - 2018 
LA  - eng 
AB  - 2D materials research is advancing rapidly as various new “beyond graphene” materials are fabricated, their properties studied, and materials tested in various applications. Rhenium disulfide is one of the 2D transition metal dichalcogenides that has recently shown to possess extraordinary properties such as that it is not limited by the strict monolayer thickness requirements. The unique inherent decoupling of monolayers in ReS2 combined with a direct bandgap and highly anisotropic properties m... 
VO  -  
IS  -  
SP  -  
OP  -  
KW  - ALD; atomic layer deposition; ReS2; rhenium sulfide; transition metal dichalcogenides; LARGE-AREA; RES2 NANOSHEETS; CHEMICAL-VAPOR-DEPOSITION; FIELD-EFFECT TRANSISTORS; TRANSITION-METAL DICHALCOGENIDES; PHOTODETECTORS; GROWTH; 2-METHOXYPHENOL; CRYSTALS; CATALYSTS; 114 Physical sciences; 116 Chemical sciences 
N1  -   
PP  -  
ER  -