TY  -  
T1  - Atomic layer deposition and properties of mixed Ta2O5 and ZrO2 films 
SN  -  /  
UR  - http://hdl.handle.net/10138/179111 
T3  -  
A1  - Kukli, Kaupo; Kemell, Marianna; Vehkamäki, Marko; Heikkilä, Mikko J.; Mizohata, Kenichiro; Kalam, Kristjan; Ritala, Mikko; Leskelä, Markku; Kundrata, Ivan; Frohlich, Karol 
A2  -  
PB  -  
Y1  - 2017 
LA  - eng 
AB  - Thin solid films consisting of ZrO2 and Ta2O5 were grown by atomic layer deposition at 300 degrees C. Ta2O5 films doped with ZrO2, TaZr2.75O8 ternary phase, or ZrO2 doped with Ta2O5 were grown to thickness and composition depending on the number and ratio of alternating ZrO2 and Ta2O5 deposition cycles. All the films grown exhibited resistive switching characteristics between TiN and Pt electrodes, expressed by repetitive current-voltage loops. The most reliable windows between high and low resi... 
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IS  -  
SP  -  
OP  -  
KW  - OXIDE THIN-FILMS; RESISTIVE SWITCHING MEMORIES; INSULATOR-METAL STRUCTURES; TANTALUM OXIDE; ORTHORHOMBIC ZIRCONIA; DIELECTRIC-PROPERTIES; TETRAGONAL ZIRCONIA; RESISTANCE; INTERFACE; EPITAXY; 114 Physical sciences; 116 Chemical sciences 
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ER  -