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T1  - Controlling Atomic Layer Deposition of 2D Semiconductor SnS(2)by the Choice of Substrate 
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UR  - http://hdl.handle.net/10138/322821 
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A1  - Mattinen, Miika; King, Peter J.; Bruener, Philipp; Leskelä, Markku; Ritala, Mikko 
A2  -  
PB  -  
Y1  - 2020 
LA  - eng 
AB  - Semiconducting 2D materials, such as SnS2, hold great promise in a variety of applications including electronics, optoelectronics, and catalysis. However, their use is hindered by the scarcity of deposition methods offering necessary levels of thickness control and large-area uniformity. Herein, a low-temperature atomic layer deposition (ALD) process is used to synthesize up to 5x5 cm(2)continuous, few-layer SnS(2)films on a variety of substrates, including SiO2/Si, Si-H, different ALD-grown fil... 
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KW  - 2D materials; atomic layer deposition; semiconductors; SnS2; DER-WAALS EPITAXY; TRANSITION-METAL DICHALCOGENIDES; CHEMICAL-VAPOR-DEPOSITION; MOLECULAR-BEAM EPITAXY; 2-DIMENSIONAL SNS2; THIN-FILMS; OPTICAL-PROPERTIES; MONOLAYER SNS2; MOS2; GROWTH; 116 Chemical sciences; 221 Nano-technology 
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ER  -