TY  -  
T1  - In Situ Positron Annihilation Spectroscopy Analysis on Low-Temperature Irradiated Semiconductors, Challenges and Possibilities 
SN  -  /  
UR  - http://hdl.handle.net/10138/325663 
T3  -  
A1  - Slotte, Jonatan; Kilpeläinen, Simo; Segercrantz, Natalie; Mizohata, Kenichiro; Räisänen, Jyrki; Tuomisto, Filip 
A2  -  
PB  -  
Y1  - 2021 
LA  - eng 
AB  - A unique experimental setup at the Accelerator Laboratory of the University of Helsinki enables in situ positron annihilation spectroscopy (PAS) analysis on ion irradiated samples. In addition, the system enables temperature control (10-300 K) of the sample both during irradiation and during subsequent positron annihilation measurements. Using such a system for defect identification and annealing studies comes with a plethora of possibilities for elaborate studies. However, the system also poses... 
VO  -  
IS  -  
SP  -  
OP  -  
KW  - defects; irradiation; positron annihilation spectroscopy; vacancies; DEFECT INTERACTIONS; RADIATION-DAMAGE; SELF-DIFFUSION; GERMANIUM; GE; GALLIUM; 114 Physical sciences 
N1  -   
PP  -  
ER  -