TY  -  
T1  - Low-Temperature Wafer-Scale Deposition of Continuous 2D SnS2 Films 
SN  -  /  
UR  - http://hdl.handle.net/10138/302076 
T3  -  
A1  - Mattinen, Miika; King, Peter J.; Khriachtchev, Leonid; Meinander, Kristoffer; Gibbon, James T.; Dhanak, Vin R.; Räisänen, Jyrki; Ritala, Mikko; Leskelä, Markku 
A2  -  
PB  -  
Y1  - 2018 
LA  - eng 
AB  - Semiconducting 2D materials, such as SnS2, hold immense potential for many applications ranging from electronics to catalysis. However, deposition of few-layer SnS2 films has remained a great challenge. Herein, continuous wafer-scale 2D SnS2 films with accurately controlled thickness (2 to 10 monolayers) are realized by combining a new atomic layer deposition process with low-temperature (250 degrees C) postdeposition annealing. Uniform coating of large-area and 3D substrates is demonstrated owi... 
VO  -  
IS  -  
SP  -  
OP  -  
KW  - 2d materials; atomic layer deposition; semiconductors; SnS2; thin films; CHEMICAL-VAPOR-DEPOSITION; TRANSITION-METAL DICHALCOGENIDES; ATOMIC LAYER DEPOSITION; SINGLE-CRYSTAL SNS2; MOLYBDENUM-DISULFIDE; GROWTH; TRANSISTORS; NANOSHEETS; MOS2; 116 Chemical sciences; 114 Physical sciences; 221 Nano-technology 
N1  -   
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ER  -