TY  -  
T1  - Molecular Dynamics Simulations of Heavy Ion Induced Defects in SiC Schottky Diodes 
SN  -  /  
UR  - http://hdl.handle.net/10138/308631 
T3  -  
A1  - Javanainen, Arto; Muinos, Henrique Vazquez; Nordlund, Kai; Djurabekova, Flyura; Galloway, Kenneth F.; Turowski, Marek; Schrimpf, Ronald D. 
A2  -  
PB  -  
Y1  - 2018 
LA  - eng 
AB  - Heavy ion irradiation increases the leakage current in reverse-biased SiC Schottky diodes. This letter demonstrates, via molecular dynamics simulations, that a combination of bias and ion-deposited energy is required to produce the degradation.... 
VO  -  
IS  -  
SP  -  
OP  -  
KW  - Ion radiation effects; modeling; power semiconductor devices; Schottky diodes; silicon carbide; SINGLE-EVENT BURNOUT; INORGANIC INSULATORS; BARRIER DIODES; THERMAL-DAMAGE; POWER DIODES; IRRADIATION; 114 Physical sciences 
N1  -   
PP  -  
ER  -