Atomic layer deposition and properties of mixed Ta2O5 and ZrO2 films

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Kukli , K , Kemell , M , Vehkamäki , M , Heikkilä , M J , Mizohata , K , Kalam , K , Ritala , M , Leskelä , M , Kundrata , I & Frohlich , K 2017 , ' Atomic layer deposition and properties of mixed Ta2O5 and ZrO2 films ' , AIP Advances , vol. 7 , no. 2 , 025001 . https://doi.org/10.1063/1.4975928

Title: Atomic layer deposition and properties of mixed Ta2O5 and ZrO2 films
Author: Kukli, Kaupo; Kemell, Marianna; Vehkamäki, Marko; Heikkilä, Mikko J.; Mizohata, Kenichiro; Kalam, Kristjan; Ritala, Mikko; Leskelä, Markku; Kundrata, Ivan; Frohlich, Karol
Contributor: University of Helsinki, Department of Chemistry
University of Helsinki, Department of Chemistry
University of Helsinki, Department of Chemistry
University of Helsinki, Department of Chemistry
University of Helsinki, Department of Physics
University of Helsinki, Department of Chemistry
University of Helsinki, Department of Chemistry
Date: 2017-02
Language: eng
Number of pages: 15
Belongs to series: AIP Advances
ISSN: 2158-3226
URI: http://hdl.handle.net/10138/179111
Abstract: Thin solid films consisting of ZrO2 and Ta2O5 were grown by atomic layer deposition at 300 degrees C. Ta2O5 films doped with ZrO2, TaZr2.75O8 ternary phase, or ZrO2 doped with Ta2O5 were grown to thickness and composition depending on the number and ratio of alternating ZrO2 and Ta2O5 deposition cycles. All the films grown exhibited resistive switching characteristics between TiN and Pt electrodes, expressed by repetitive current-voltage loops. The most reliable windows between high and low resistive states were observed in Ta2O5 films mixed with relatively low amounts of ZrO2, providing Zr to Ta cation ratio of 0.2. (C) 2017 Author(s).
Subject: OXIDE THIN-FILMS
RESISTIVE SWITCHING MEMORIES
INSULATOR-METAL STRUCTURES
TANTALUM OXIDE
ORTHORHOMBIC ZIRCONIA
DIELECTRIC-PROPERTIES
TETRAGONAL ZIRCONIA
RESISTANCE
INTERFACE
EPITAXY
114 Physical sciences
116 Chemical sciences
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