Modeling of high-fluence irradiation of amorphous Si and crystalline Al by linearly focused Ar ions

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Lopez-Cazalilla , A , Ilinov , A , Nordlund , K & Djurabekova , F 2019 , ' Modeling of high-fluence irradiation of amorphous Si and crystalline Al by linearly focused Ar ions ' , Journal of Physics. Condensed Matter , vol. 31 , no. 7 , 075302 . https://doi.org/10.1088/1361-648X/aaf59f

Title: Modeling of high-fluence irradiation of amorphous Si and crystalline Al by linearly focused Ar ions
Author: Lopez-Cazalilla, Alvaro; Ilinov, Andrew; Nordlund, Kai; Djurabekova, Flyura
Contributor: University of Helsinki, Department of Physics
University of Helsinki, Department of Physics
University of Helsinki, Department of Physics
University of Helsinki, Department of Physics
Date: 2019-02-20
Language: eng
Number of pages: 13
Belongs to series: Journal of Physics. Condensed Matter
ISSN: 0953-8984
URI: http://hdl.handle.net/10138/300130
Abstract: Long time ion irradiation of surfaces under tilted incidence causes formation of regular nanostructures known as surface ripples. The nature of mechanisms leading to ripples is still not clear, this is why computational methods can shed the light on such a complex phenomenon and help to understand which surface processes are mainly responsible for it. In this work, we analyse the surface response of two materials, a semiconductor (silicon) and a metal (aluminium) under irradiation with the 250 eV and 1000 eV Ar ions focused at 70° from the normal to the surface. We simulate consecutive ion impacts by the means of molecular dynamics to investigate the effect on ripple formation. We find that the redistribution mechanism seems to be the main creator of ripples in amorphous materials, while the erosion mechanism is the leading origin for the pattern formation in crystalline metals.
Subject: nanostructuring
redistribution
erosion
surface
ripple formation
MOLECULAR-DYNAMICS
INTERATOMIC POTENTIALS
SIMULATION
114 Physical sciences
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